All Transistors. 2STW4466 Datasheet

 

2STW4466 Datasheet and Replacement


   Type Designator: 2STW4466
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO247
 

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2STW4466 Datasheet (PDF)

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2STW4466

2STW4466High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 80 V Complementary to 2STW1693 Typical ft = 20 MHz Fully characterized at 125 oCApplications32 Audio power amplifier1TO-247DescriptionThe device is a NPN transistor manufactured in Figure 1. Internal schematic diagramlow voltage planar technology using

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2STW4466

2STW4468High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Complementary to 2STW1695 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-247 Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new Bi

Datasheet: 2STR1160 , 2STR1215 , 2STR1230 , 2STR2160 , 2STR2215 , 2STR2230 , 2STW1693 , 2STW1695 , MPSA42 , 2STW4468 , 2STX1360 , 2STX2220 , 3STR1630 , BDW93CFP , BDW94CFP , BDX53BFP , BUB941ZT .

Keywords - 2STW4466 transistor datasheet

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