2STW4468 Specs and Replacement
Type Designator: 2STW4468
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO247
2STW4468 Substitution
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2STW4468 datasheet
2STW4468 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Complementary to 2STW1695 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications TO-247 Audio power amplifier Description Figure 1. Internal schematic diagram The device is a NPN transistor manufactured using new Bi... See More ⇒
2STW4466 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 80 V Complementary to 2STW1693 Typical ft = 20 MHz Fully characterized at 125 oC Applications 3 2 Audio power amplifier 1 TO-247 Description The device is a NPN transistor manufactured in Figure 1. Internal schematic diagram low voltage planar technology using ... See More ⇒
Detailed specifications: 2STR1215 , 2STR1230 , 2STR2160 , 2STR2215 , 2STR2230 , 2STW1693 , 2STW1695 , 2STW4466 , B647 , 2STX1360 , 2STX2220 , 3STR1630 , BDW93CFP , BDW94CFP , BDX53BFP , BUB941ZT , BUF420AW .
History: BUL1102E
Keywords - 2STW4468 pdf specs
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History: BUL1102E
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