All Transistors. 2STW4468 Datasheet

 

2STW4468 Datasheet and Replacement


   Type Designator: 2STW4468
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO247
 

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2STW4468 Datasheet (PDF)

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2STW4468

2STW4468High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Complementary to 2STW1695 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC321ApplicationsTO-247 Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new Bi

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2STW4468

2STW4466High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 80 V Complementary to 2STW1693 Typical ft = 20 MHz Fully characterized at 125 oCApplications32 Audio power amplifier1TO-247DescriptionThe device is a NPN transistor manufactured in Figure 1. Internal schematic diagramlow voltage planar technology using

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: E1B | SST2907AHZG | MT3S04AU | 3DD102D | D34DJ2 | RCA1A09 | BFJ70

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