2N5677 Datasheet. Specs and Replacement

Type Designator: 2N5677  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 125 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO61

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2N5677 datasheet

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DATA SHEET 2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN... See More ⇒

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2N5677

NPN 2N5671 2N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS HIGH CURRENT FAST SWITCHING APPLICATIONS The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N5671 90 VCEO Collector-Emitter Voltage V 2N5672 120 2N56... See More ⇒

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Detailed specifications: 2N5666, 2N5666SM, 2N5667, 2N567, 2N5671, 2N5672, 2N5675, 2N5676, BC556, 2N5678, 2N5679, 2N568, 2N5680, 2N5681, 2N5681SM, 2N5682, 2N5683

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