BUL59 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL59
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package: TO220
BUL59 Transistor Equivalent Substitute - Cross-Reference Search
BUL59 Datasheet (PDF)
bul59.pdf
BUL59 HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESSAPPLICATIONS ELECTRONIC TRANSFORMERS FOR32HALOGEN LAMPS1 SWITCH MODE POWER SUPPLIESTO-220DESCRIPTIONThe BUL59 is manufactured using high voltageMulti Epitaxial Mesa technol
bul59.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL59 DESCRIPTIONCollectorEmitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 2A High Speed Switching APPLICATIONSDesigned for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: LMUN2216LT1G
History: LMUN2216LT1G
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050