BUL705 Specs and Replacement
Type Designator: BUL705
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220
BUL705 Substitution
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BUL705 datasheet
BUL705 High voltage fast-switching NPN Power Transistor General features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 Fully characterized at 125 C 2 1 In compliance with the 2002/93/EC European TO-220 Directive Description The device is manufactu... See More ⇒
BUL704 High voltage fast-switching NPN Power Transistor General features NPN Transistor High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 In compliance with the 2002/93/EC European 2 1 Directive TO-220 Description The device is manufactured using high voltage Multi-Epitax... See More ⇒
BUL70A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 0.32 0.24 HIGH SPEED NPN SILICON POWER TRANSISTOR 0.10 0.02 16 13 max. Designed for use in 1.70 electronic ballast applications max. 10 max. SEMEFAB DESIGNED AND DIFFUSED DIE 6.7 6.3 3.1 HIGH VOLTAGE 2.9 FAST SWITCHING 4 HIGH ENERGY RATING 3.7 7.3... See More ⇒
Detailed specifications: BUL138, BUL310FP, BUL312FP, BUL39D, BUL49D, BUL59, BUL654, BUL704, 2SA1943, BUL7216, BUL741, BUL742C, BUL85D, BUL89, BUL903ED, BUL903EDFP, BULB128
Keywords - BUL705 pdf specs
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History: 3CA649
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