BUT30V Datasheet, Equivalent, Cross Reference Search
Type Designator: BUT30V
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 100 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 27
Noise Figure, dB: -
Package: ISOTOP
BUT30V Transistor Equivalent Substitute - Cross-Reference Search
BUT30V Datasheet (PDF)
but30v.pdf
BUT30VNPN TRANSISTOR POWER MODULE NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASEth SPECIFIED ACCIDENTAL OVERLOADAREAS FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING LOW INTERNAL PARASITIC INDUCTANCEAPPLICATIONS: Pin 4 not connected MOTOR CONTROL SMPS & UPS WELDING EQUIPMENTISOTOPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAX
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .