HD1750JL Datasheet, Equivalent, Cross Reference Search
Type Designator: HD1750JL
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 24 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5.5
Noise Figure, dB: -
Package: TO264
HD1750JL Transistor Equivalent Substitute - Cross-Reference Search
HD1750JL Datasheet (PDF)
hd1750jl.pdf
HD1750JLVery high voltage NPN power transistor for high definition and slimCRT displayPRELIMINARY DATAFeatures State-of-the-art technology: diffused collector enhanced generation EHVS1 Wider range of optimum drive conditions Less sensitive to operating temperature variation In compliance with the 2002/93/EC European 32directive1TO-264Description
hd1750fx.pdf
HD1750FXHIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGHDEFINITION AND NEW SUPER-SLIM CRT DISPLAYS STATE-OF-THE-ART TECHNOLOGY: Figure 1: PackageDIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION FULLY INSULATED POWER PACKAGE U.L. COMPLIANTAPPLICATIONSISOWATT218FX HORIZONTA
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC895-1
