HD1750JL Specs and Replacement
Type Designator: HD1750JL
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 24 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5.5
Package: TO264
HD1750JL Substitution
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HD1750JL datasheet
HD1750JL Very high voltage NPN power transistor for high definition and slim CRT display PRELIMINARY DATA Features State-of-the-art technology diffused collector enhanced generation EHVS1 Wider range of optimum drive conditions Less sensitive to operating temperature variation In compliance with the 2002/93/EC European 3 2 directive 1 TO-264 Description... See More ⇒
HD1750FX HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS STATE-OF-THE-ART TECHNOLOGY Figure 1 Package DIFFUSED COLLECTOR "ENHANCED GENERATION" EHVS1 WIDER RANGE OF OPTIMUM DRIVE CONDITIONS LESS SENSITIVE TO OPERATING TEMPERATURE VARIATION FULLY INSULATED POWER PACKAGE U.L. COMPLIANT APPLICATIONS ISOWATT218FX HORIZONTA... See More ⇒
Detailed specifications: BUT70W , BUTW92 , BUXD87 , D44H11FP , D45H11FP , HD1530FX , HD1530JL , HD1750FX , B772 , MD1802FX , MD1803DFP , MD1803DFX , MD2001FX , MD2009DFX , MD2103DFP , MD2310FX , MJD31CT4A .
History: 2N3503
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History: 2N3503
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