All Transistors. STD1802 Datasheet

 

STD1802 Datasheet and Replacement


   Type Designator: STD1802
   SMD Transistor Code: D1802
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: DPAK
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STD1802 Datasheet (PDF)

 ..1. Size:242K  st
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STD1802

STD1802Low voltage fast-switching NPN power transistorFeatures Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 3package in tape & reel (suffix T4)1 TO-252Description DPAKThe device is manufactured in Planar technology (suffix T4)with Base Island l

 ..2. Size:222K  inchange semiconductor
std1802.pdf pdf_icon

STD1802

isc Silicon NPN Power Transistor STD1802DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.4V(Max)( I = 3A; I = 0.15A)CE(sat C BDC Current Gain -h = 100(Min)@ I = 3AFE CFast -Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCCFL dirversVoltage regulatorsRelay dirversHigh efficiency l

 0.1. Size:247K  st
std1802t4-a.pdf pdf_icon

STD1802

STD1802T4-ALow voltage fast-switching NPN power transistorFeatures This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic3 Fast-switching speed1 Surface-mounting DPAK (TO-252) power TO-252package in tape & reel (suffix T4) DPAK (suffix T4)DescriptionThe device

 8.1. Size:630K  1
std180n4f6.pdf pdf_icon

STD1802

STD180N4F6 N-channel 40 V, 2.5 m typ., 80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code V R max. I P DS DS(on) D TOTSTD180N4F6 40 V 2.8 m 80 A 130 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MJE42A | MRF5812 | 2SB353A | ZTX212B | AD-BC848-C | MCH3245 | KT368AM

Keywords - STD1802 transistor datasheet

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