All Transistors. STT818B Datasheet

 

STT818B Datasheet and Replacement


   Type Designator: STT818B
   SMD Transistor Code: 818B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23-6L
 

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STT818B Datasheet (PDF)

 ..1. Size:143K  st
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STT818B

STT818BHigh gain low voltage PNP power transistorFeatures Very low collector to emitter saturation voltage DC current gain > 100 (hFE) 3 A continuous collector current (IC)Applications Power management in portable equipmentsSOT23-6L Switching regulator in battery charger applicationsDescriptionThe device is manufactured in low voltage PNP Figure 1. Inter

 9.1. Size:127K  samhop
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STT818B

GreenProductSTT812AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.569 @ VGS=10VSurface Mount Package.80V 1.4A674 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ASY58 | NB112FY | 2N1132CSM | 2SC1959M | BF692W | ASY51 | NA21ZH

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