All Transistors. 2SC6026MFV Datasheet

 

2SC6026MFV Datasheet and Replacement


   Type Designator: 2SC6026MFV
   SMD Transistor Code: HY_HG
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 0.95 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: VESM
 

 2SC6026MFV Substitution

   - BJT ⓘ Cross-Reference Search

   

2SC6026MFV Datasheet (PDF)

 ..1. Size:147K  toshiba
 2sc6026mfv.pdf pdf_icon

2SC6026MFV

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32

 0.1. Size:162K  toshiba
 2sc6026mfv-y 2sc6026mfv-gr.pdf pdf_icon

2SC6026MFV

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32

 7.1. Size:142K  toshiba
 2sc6026.pdf pdf_icon

2SC6026MFV

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120~400 : Complementary to 2SA2154 13Absolute Maximum Ratings (Ta = 25C) 2

 7.2. Size:145K  toshiba
 2sc6026ct.pdf pdf_icon

2SC6026MFV

2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit: mm0.60.05 High voltage and high current 0.50.03: VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 : Complementary to 2SA2154CT Absolut

SHOW MORE

Datasheet: 2SC5376CT , 2SC5376F , 2SC5376FV , 2SC5720 , 2SC5765 , 2SC5766 , 2SC6026 , 2SC6026CT , 2SD882 , 2SC6067 , 2SC6100 , 2SC6132 , 2SC6133 , 2SC6134 , 2SC6135 , 2SC752(G)TM , TTA1586FU .

History: 2N3859

Keywords - 2SC6026MFV transistor datasheet

 2SC6026MFV cross reference
 2SC6026MFV equivalent finder
 2SC6026MFV lookup
 2SC6026MFV substitution
 2SC6026MFV replacement

 

 
Back to Top

 


 
.