2SC6026MFV
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC6026MFV
SMD Transistor Code: HY_HG
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 60
MHz
Collector Capacitance (Cc): 0.95
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: VESM
2SC6026MFV
Transistor Equivalent Substitute - Cross-Reference Search
2SC6026MFV
Datasheet (PDF)
..1. Size:147K toshiba
2sc6026mfv.pdf
2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32
0.1. Size:162K toshiba
2sc6026mfv-y 2sc6026mfv-gr.pdf
2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32
7.1. Size:142K toshiba
2sc6026.pdf
2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120~400 : Complementary to 2SA2154 13Absolute Maximum Ratings (Ta = 25C) 2
7.2. Size:145K toshiba
2sc6026ct.pdf
2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit: mm0.60.05 High voltage and high current 0.50.03: VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 : Complementary to 2SA2154CT Absolut
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