All Transistors. HN2A26FS Datasheet

 

HN2A26FS Datasheet and Replacement


   Type Designator: HN2A26FS
   SMD Transistor Code: PF_PH
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 1.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FS6
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HN2A26FS Datasheet (PDF)

 ..1. Size:131K  toshiba
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HN2A26FS

HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) 1.00.05package. 0.80.05 0.10.050.10.05 High voltage : VCEO = -50 V High current : IC = -100 mA (max) 1 6 High hFE : hFE = 120 to 400 Excellen

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: RT2P01M | BF177 | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | KT208V

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