HN2A26FS Specs and Replacement
Type Designator: HN2A26FS
SMD Transistor Code: PF_PH
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 1.6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: FS6
HN2A26FS Substitution
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HN2A26FS datasheet
HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Applications Unit mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) 1.0 0.05 package. 0.8 0.05 0.1 0.05 0.1 0.05 High voltage VCEO = -50 V High current IC = -100 mA (max) 1 6 High hFE hFE = 120 to 400 Excellen... See More ⇒
Detailed specifications: HN1C01FU, HN1C03F, HN1C03FU, HN1C05FE, HN1C07F, HN1C26FS, HN2A01FE, HN2A01FU, TIP31C, HN2C01FE, HN2C01FU, HN2C26FS, HN3A51F, HN3A56F, HN3B01F, HN3B02FU, HN3C51F
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