All Transistors. HN2A26FS Datasheet

 

HN2A26FS Datasheet and Replacement


   Type Designator: HN2A26FS
   SMD Transistor Code: PF_PH
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 1.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FS6
 

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HN2A26FS Datasheet (PDF)

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HN2A26FS

HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) 1.00.05package. 0.80.05 0.10.050.10.05 High voltage : VCEO = -50 V High current : IC = -100 mA (max) 1 6 High hFE : hFE = 120 to 400 Excellen

Datasheet: HN1C01FU , HN1C03F , HN1C03FU , HN1C05FE , HN1C07F , HN1C26FS , HN2A01FE , HN2A01FU , 100DA025D , HN2C01FE , HN2C01FU , HN2C26FS , HN3A51F , HN3A56F , HN3B01F , HN3B02FU , HN3C51F .

History: DTA144EM3 | MPS750 | TI619 | NB221H | CSA968AY | 2SC930SPA | CXT3150

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