All Transistors. HN2A26FS Datasheet

 

HN2A26FS Datasheet, Equivalent, Cross Reference Search


   Type Designator: HN2A26FS
   SMD Transistor Code: PF_PH
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 1.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: FS6

 HN2A26FS Transistor Equivalent Substitute - Cross-Reference Search

   

HN2A26FS Datasheet (PDF)

 ..1. Size:131K  toshiba
 hn2a26fs.pdf

HN2A26FS HN2A26FS

HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN2A26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) 1.00.05package. 0.80.05 0.10.050.10.05 High voltage : VCEO = -50 V High current : IC = -100 mA (max) 1 6 High hFE : hFE = 120 to 400 Excellen

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top