All Transistors. HN2C01FE Datasheet

 

HN2C01FE Datasheet and Replacement


   Type Designator: HN2C01FE
   SMD Transistor Code: L1G_L1Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: ES6
 

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HN2C01FE Datasheet (PDF)

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HN2C01FE

HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN2C01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 C

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HN2C01FE

HN2C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN2C01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2

Datasheet: HN1C03F , HN1C03FU , HN1C05FE , HN1C07F , HN1C26FS , HN2A01FE , HN2A01FU , HN2A26FS , 2SD1047 , HN2C01FU , HN2C26FS , HN3A51F , HN3A56F , HN3B01F , HN3B02FU , HN3C51F , HN3C56FU .

History: 2SC3422O | 2SC620M | UN621E | 2SC621 | 2SC621M | CSA966 | 2SC622

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