HN3A56F Datasheet, Equivalent, Cross Reference Search
Type Designator: HN3A56F
SMD Transistor Code: 49
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SM6
HN3A56F Transistor Equivalent Substitute - Cross-Reference Search
HN3A56F Datasheet (PDF)
hn3a56f.pdf
HN3A56F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN3A56F Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO =-50V, IC = -150mA (max) High hFE : hFE = 70~400 Excellent hFE linearity : hFE (IC = -0.1mA) / (IC = -2mA) = 0.95 (typ.) Maximum Ratings (Ta = 25C) (Q1, Q2 Common)
hn3a51f.pdf
HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN3A51F Unit: mmAudio Frequency General Purpose Amplifier Applications High voltage : VCEO = -120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Sy
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 40915 | CZD4672 | CZT3904 | 40616L | LMBTA56LT3G | 41505
History: 40915 | CZD4672 | CZT3904 | 40616L | LMBTA56LT3G | 41505
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