All Transistors. HN3A56F Datasheet

 

HN3A56F Datasheet and Replacement


   Type Designator: HN3A56F
   SMD Transistor Code: 49
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SM6
 

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HN3A56F Datasheet (PDF)

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HN3A56F

HN3A56F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN3A56F Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO =-50V, IC = -150mA (max) High hFE : hFE = 70~400 Excellent hFE linearity : hFE (IC = -0.1mA) / (IC = -2mA) = 0.95 (typ.) Maximum Ratings (Ta = 25C) (Q1, Q2 Common)

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HN3A56F

HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN3A51F Unit: mmAudio Frequency General Purpose Amplifier Applications High voltage : VCEO = -120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Sy

Datasheet: HN1C26FS , HN2A01FE , HN2A01FU , HN2A26FS , HN2C01FE , HN2C01FU , HN2C26FS , HN3A51F , S9014 , HN3B01F , HN3B02FU , HN3C51F , HN3C56FU , HN3C61FU , HN3C67FE , HN4A06J , HN4A08J .

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