All Transistors. HN3B01F Datasheet

 

HN3B01F Datasheet and Replacement


   Type Designator: HN3B01F
   SMD Transistor Code: 5A
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SM6
 

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HN3B01F Datasheet (PDF)

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HN3B01F

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HN3B01F

HN3B02FU TENTATIVE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) HN3B02FU Audio Frequency General Purpose Amplifier Applications Unit: mmQ1 High voltage : VCEO = -50V High current : I = -150mA (max) C High h : h = 120~400 FE FE Excellent h linearity : h (I = -0.1mA) / (I = -2mA) = 0.95 FE FE C C(typ.) Q2 High voltage : V = 60V CEO Hi

Datasheet: HN2A01FE , HN2A01FU , HN2A26FS , HN2C01FE , HN2C01FU , HN2C26FS , HN3A51F , HN3A56F , 2SC4793 , HN3B02FU , HN3C51F , HN3C56FU , HN3C61FU , HN3C67FE , HN4A06J , HN4A08J , HN4A51J .

History: MSB92ASWT1G | MPS6734 | CMPTA13 | DTC113ZKAFRA | 2SC3112B | DT4306 | MPS6727

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