All Transistors. HN3B01F Datasheet

 

HN3B01F Datasheet and Replacement


   Type Designator: HN3B01F
   SMD Transistor Code: 5A
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SM6
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HN3B01F Datasheet (PDF)

 ..1. Size:265K  toshiba
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HN3B01F

 9.1. Size:84K  toshiba
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HN3B01F

HN3B02FU TENTATIVE TOSHIBA Transistor Silicon PNPNPN Epitaxial Type (PCT Process) HN3B02FU Audio Frequency General Purpose Amplifier Applications Unit: mmQ1 High voltage : VCEO = -50V High current : I = -150mA (max) C High h : h = 120~400 FE FE Excellent h linearity : h (I = -0.1mA) / (I = -2mA) = 0.95 FE FE C C(typ.) Q2 High voltage : V = 60V CEO Hi

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

History: KT8107D2 | 2SB761B | 2N5901 | UN9217R | 2N1056 | 2SC999A | ECG2306

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