HN3C56FU Specs and Replacement

Type Designator: HN3C56FU

SMD Transistor Code: 38

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: US6

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HN3C56FU datasheet

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HN3C56FU

HN3C56FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C56FU Unit mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, ... See More ⇒

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HN3C56FU

HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C51F Unit mm Audio Frequency General Purpose Amplifier Applications High voltage VCEO = 120V High hFE hFE = 200 700 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base vo... See More ⇒

Detailed specifications: HN2C01FE, HN2C01FU, HN2C26FS, HN3A51F, HN3A56F, HN3B01F, HN3B02FU, HN3C51F, S8550, HN3C61FU, HN3C67FE, HN4A06J, HN4A08J, HN4A51J, HN4A56JU, HN4B01JE, HN4B04J

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