All Transistors. HN3C67FE Datasheet

 

HN3C67FE Datasheet and Replacement


   Type Designator: HN3C67FE
   SMD Transistor Code: 72
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: ES6
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HN3C67FE Datasheet (PDF)

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HN3C67FE

HN3C67FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C67FE Unit: mmAudio Frequency Amplifier Applications AM Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)

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HN3C67FE

HN3C61FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C61FU Unit: mmUltra High Speed Switching Application Computer, Counter Applications. High Transition Frequency : fT = 400MHz(Typ.) : VCE(sat) = 0.3V(Max.) Low Saturation Voltage High Speed Switching Time : tstg = 15ns(Typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symb

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: FZT560 | CH867UPNGP | ET5065 | AFY29 | NJD2873T4G | BSX48 | 2SA761-1

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