HN3C67FE Specs and Replacement
Type Designator: HN3C67FE
SMD Transistor Code: 72
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: ES6
HN3C67FE Substitution
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HN3C67FE datasheet
HN3C67FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C67FE Unit mm Audio Frequency Amplifier Applications AM Amplifier Applications Small package (dual type) High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) ... See More ⇒
HN3C61FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C61FU Unit mm Ultra High Speed Switching Application Computer, Counter Applications. High Transition Frequency fT = 400MHz(Typ.) VCE(sat) = 0.3V(Max.) Low Saturation Voltage High Speed Switching Time tstg = 15ns(Typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symb... See More ⇒
Detailed specifications: HN2C26FS, HN3A51F, HN3A56F, HN3B01F, HN3B02FU, HN3C51F, HN3C56FU, HN3C61FU, MJE340, HN4A06J, HN4A08J, HN4A51J, HN4A56JU, HN4B01JE, HN4B04J, HN4B06J, HN4C05JU
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