All Transistors. HN4A06J Datasheet

 

HN4A06J Datasheet and Replacement


   Type Designator: HN4A06J
   SMD Transistor Code: 53
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SMV
 

 HN4A06J Substitution

   - BJT ⓘ Cross-Reference Search

   

HN4A06J Datasheet (PDF)

 ..1. Size:278K  toshiba
 hn4a06j.pdf pdf_icon

HN4A06J

HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A06J Unit: mmAudio Frequency General Purpose Amplifier Applications High voltage : VCEO = -120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-ba

 9.1. Size:158K  toshiba
 hn4a08j.pdf pdf_icon

HN4A06J

HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A08J Low Frequency Power Amplifer Applications Unit: mmPower Switching Application High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)= -0.4V (Max.) : (IC = -500mA , IB = -20mA) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-base

Datasheet: HN3A51F , HN3A56F , HN3B01F , HN3B02FU , HN3C51F , HN3C56FU , HN3C61FU , HN3C67FE , 2N2222A , HN4A08J , HN4A51J , HN4A56JU , HN4B01JE , HN4B04J , HN4B06J , HN4C05JU , HN4C06J .

History: BDW94B | NPS2716 | BUY90SM | JE5400C | BC583B | BDS19SM | KSD1408

Keywords - HN4A06J transistor datasheet

 HN4A06J cross reference
 HN4A06J equivalent finder
 HN4A06J lookup
 HN4A06J substitution
 HN4A06J replacement

 

 
Back to Top

 


 
.