HN4A08J Specs and Replacement
Type Designator: HN4A08J
SMD Transistor Code: 36
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SMV
HN4A08J Substitution
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HN4A08J datasheet
HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A08J Low Frequency Power Amplifer Applications Unit mm Power Switching Application High DC Current Gain hFE = 100 320 Low Saturation Voltage VCE(sat)= -0.4V (Max.) (IC = -500mA , IB = -20mA) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base... See More ⇒
HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A06J Unit mm Audio Frequency General Purpose Amplifier Applications High voltage VCEO = -120V High hFE hFE = 200 700 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-ba... See More ⇒
Detailed specifications: HN3A56F, HN3B01F, HN3B02FU, HN3C51F, HN3C56FU, HN3C61FU, HN3C67FE, HN4A06J, BD335, HN4A51J, HN4A56JU, HN4B01JE, HN4B04J, HN4B06J, HN4C05JU, HN4C06J, HN4C08J
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