All Transistors. HN4A08J Datasheet

 

HN4A08J Datasheet and Replacement


   Type Designator: HN4A08J
   SMD Transistor Code: 36
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SMV
 

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HN4A08J Datasheet (PDF)

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HN4A08J

HN4A08J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A08J Low Frequency Power Amplifer Applications Unit: mmPower Switching Application High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)= -0.4V (Max.) : (IC = -500mA , IB = -20mA) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-base

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HN4A08J

HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A06J Unit: mmAudio Frequency General Purpose Amplifier Applications High voltage : VCEO = -120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-ba

Datasheet: HN3A56F , HN3B01F , HN3B02FU , HN3C51F , HN3C56FU , HN3C61FU , HN3C67FE , HN4A06J , TIP35C , HN4A51J , HN4A56JU , HN4B01JE , HN4B04J , HN4B06J , HN4C05JU , HN4C06J , HN4C08J .

History: BTB1386M3 | 2SA444 | 2SAR553P5 | 2SC4117GR | 2N2243 | NSP599

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