All Transistors. HN4A56JU Datasheet

 

HN4A56JU Datasheet and Replacement


   Type Designator: HN4A56JU
   SMD Transistor Code: 37
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: USV
 

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HN4A56JU Datasheet (PDF)

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HN4A56JU

HN4A56JU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A56JU Unit: mmAudio Frequency General Purpose Amplifier Applications Small Package (Dual Type) High Voltage and High Current : VCEO= -50V, IC = -150mA(MAX.) High hFE Excellent hFE Linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common

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HN4A56JU

HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A51J Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage : VCEO = -120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Sym

Datasheet: HN3B02FU , HN3C51F , HN3C56FU , HN3C61FU , HN3C67FE , HN4A06J , HN4A08J , HN4A51J , S8550 , HN4B01JE , HN4B04J , HN4B06J , HN4C05JU , HN4C06J , HN4C08J , HN4C51J , RN1101ACT .

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