HN4C05JU Datasheet, Equivalent, Cross Reference Search
Type Designator: HN4C05JU
SMD Transistor Code: NA_NB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 4.2 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: USV
HN4C05JU Transistor Equivalent Substitute - Cross-Reference Search
HN4C05JU Datasheet (PDF)
hn4c05ju.pdf
HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C05JU Low Frequency Amplifier Applications Unit: mmMuting Applications Switching Applications Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) High Collector Current :IC=400mA(Max.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCo
hn4c06j.pdf
HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C06J Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol
hn4c08j.pdf
HN4C08J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C08J Unit: mmLow Frequency Power Amplifer Applications Power Switching Application High DC Current Gain : hFE = 100~320 Low Saturation Voltage : VCE(sat)=0.4V (Max.) : (IC = 500mA , IB = 20mA) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating UnitCollector-base vol
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
