All Transistors. 2N57 Datasheet

 

2N57 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N57

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 0.2 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3

2N57 Transistor Equivalent Substitute - Cross-Reference Search

 

2N57 Datasheet (PDF)

1.1. 2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf Size:317K _rca

2N57

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1.2. 2n5780 2n5777.pdf Size:57K _upd

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1.3. 2n5780.pdf Size:57K _upd

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1.4. 2n5794uc.pdf Size:187K _upd

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /495 DEVICES LEVELS 2N5793 JAN 2N5794 2N5794U

1.5. 2n5785smd05.pdf Size:10K _upd

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2N5785SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 65V IC = 3.5A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab he

1.6. 2n5777.pdf Size:57K _upd

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1.7. 2n5784smd05.pdf Size:10K _upd

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2N5784SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 3.5A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab he

1.8. 2n5779.pdf Size:57K _upd

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1.9. 2n5785smd.pdf Size:10K _upd

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2N5785SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 65V IC = 3.5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26

1.10. 2n5781xl.pdf Size:10K _upd

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2N5781XL Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a 7.75 (0.305) 8.51 (0.335) Hermetically sealed TO5 Metal Package. 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 38.00 Bipolar PNP Device. (1.5) 0.41 (0.016) min. 0.53 (0.021) dia. VCEO = 80V 5.08 (0.200) IC = 3.5A typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ca

1.11. 2n5778.pdf Size:57K _upd

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1.12. 2n5786l.pdf Size:149K _upd

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SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 (TO-205AA) Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 45V VCER RBE = 100Ω Collect

1.13. 2n5784smd.pdf Size:10K _upd

2N57

2N5784SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 3.5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26

1.14. 2n5796u.pdf Size:123K _upd

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TECHNICAL DATA PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices Qualified Level JAN 2N5796 2N5795 JANTX 2N5796U JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO TO-78* Collector Current 600 mAdc IC Both(2) One(1) Section Sections

1.15. 2n5794u.pdf Size:187K _upd

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2N57

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /495 DEVICES LEVELS 2N5793 JAN 2N5794 2N5794U

1.16. 2n5794uc 2n5794u.pdf Size:187K _upd

2N57
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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /495 DEVICES LEVELS 2N5793 JAN 2N5794 2N5794U

1.17. 2n5782l.pdf Size:10K _upd

2N57

2N5782L Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar PNP Device in a 7.75 (0.305) 8.51 (0.335) Hermetically sealed TO5 Metal Package. 6.10 (0.240) 6.60 (0.260) 0.89 (0.035)max. 38.00 Bipolar PNP Device. (1.5) 0.41 (0.016) min. 0.53 (0.021) dia. VCEO = 65V 5.08 (0.200) IC = 3.5A typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can

1.18. 2n5785n1.pdf Size:340K _upd

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NPN SILICON SWITCHING TRANSISTOR 2N5785N1 • Hermetic SMD0.5 Metal package. • Ideally Suited for Linear Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 65V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Base Voltage 5V IC Continuous Collecto

1.19. 2n5779 2n5778.pdf Size:57K _upd

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1.20. 2n5758re.pdf Size:183K _motorola

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Order this document MOTOROLA by 2N5758/D SEMICONDUCTOR TECHNICAL DATA 2N5745 (See 2N4398) 2N5758 High-Voltage High-Power Silicon Transistors 6 AMPERE . . . designed for use in high power audio amplifier applications and high voltage POWER TRANSISTOR switching regulator circuits. NPN SILICON • High Collector–Emitter Sustaining Voltage — 100–140 VOLTS VCEO(sus) = 100 Vdc (Min) 150 W

1.21. 2n4398 2n4399 2n5745.pdf Size:237K _motorola

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Order this document MOTOROLA by 2N4398/D SEMICONDUCTOR TECHNICAL DATA 2N4347 (See 2N3442) PNP Silicon High-Power Transistors 2N4398 . . . designed for use in power amplifier and switching circuits. • Low Collector–Emitter Saturation Voltage — 2N4399 IC = 15 Adc, VCE(sat) = 1.0 Vdc (Max) 2N4398,99 2N5745 IC = 15 Adc, VCE(sat) = 1.5 Vdc (Max) 2N5745 IIIIIIIIIIIIIIIIIIIIIII • DC Curren

1.22. 2n5772.pdf Size:28K _fairchild_semi

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2N5772 NPN Switching Transistor • Sourced from process 22. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continued 300 mA TSTG Operating and Storage Junction Temperature Range - 55 ~

1.23. 2n5771 mmbt5771.pdf Size:585K _fairchild_semi

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2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 15

1.24. 2n5769.pdf Size:296K _fairchild_semi

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Discrete POWER & Signal Technologies 2N5769 C TO-92 B E NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V V Collector-Base Voltage 40 V

1.25. 2n5770.pdf Size:295K _fairchild_semi

2N57
2N57

Discrete POWER & Signal Technologies 2N5770 C TO-92 B E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V V

1.26. 2n5771.pdf Size:708K _fairchild_semi

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2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 15

1.27. 2n5783 2n5786.pdf Size:89K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.28. 2n3646 2n5772 pn3646.pdf Size:73K _central

2N57

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.29. 2n5793 2n5794.pdf Size:67K _central

2N57

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.30. 2n5910 pn5910 2n5771.pdf Size:65K _central

2N57

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.31. 2n4398-99 2n5745.pdf Size:158K _mospec

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A A A A

1.32. 2n5796u.pdf Size:243K _optek

2N57
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Product Bulletin JANTX, JANTXV, 2N5796U September 1996 Surface Mount Dual PNP Transistor Type JANTX, JANTXV, 2N5796U .058 (1.47) Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V •Ceramic surface mount package Collector-Base Voltage . . . . . . . . . . .

1.33. 2n5794u.pdf Size:262K _optek

2N57
2N57

Product Bulletin JANTX, JANTXV, 2N5794U September 1996 Surface Mount Dual NPN Transistor Type JANTX, JANTXV, 2N5794U .058 (1.47) Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V •Hermetically sealed Collector-Base Voltage

1.34. 2n5758.pdf Size:12K _semelab

2N57

2N5758 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

1.35. 2n5759.pdf Size:11K _semelab

2N57

2N5759 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 120V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 6A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

1.36. 2n5784.pdf Size:18K _semelab

2N57
2N57

2N5784 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) SILICON EPITAXIAL 8.51 (0.335) NPN TRANSISTOR 4.19 (0.165) 4.95 (0.195) 0.89 max. FEATURES (0.035) 12.70 (0.500) 7.75 (0.305) min. General purpose power transistor for 8.51 (0.335) dia. switching and linear applications in a hermetic TO–39 package. 5.08 (0.200) typ. 2.54 2 (0.100) 1 3

1.37. 2n5785.pdf Size:11K _semelab

2N57

2N5785 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 65V dia. IC = 3.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 c

1.38. 2n5741.pdf Size:11K _semelab

2N57

2N5741 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

1.39. 2n5743.pdf Size:11K _semelab

2N57

2N5743 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 60V IC = 20A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specific

1.40. 2n5781.pdf Size:11K _semelab

2N57

2N5781 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 3.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 c

1.41. 2n5777.pdf Size:64K _advanced-semi

2N57

1.42. 2n5770.pdf Size:242K _cdil

2N57
2N57

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 TO-92 Plastic Package C B E VHF/UHF Amplifier Mixer and Oscillator Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 15 V Collector Base Voltage VCBO 30 V VEBO

1.43. 2n5741 2n5742.pdf Size:104K _jmnic

2N57
2N57

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage ·Fast switching speed APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum r

1.44. 2n5758 2n5759 2n5760.pdf Size:129K _jmnic

2N57
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Abs

1.45. 2n5745.pdf Size:164K _jmnic

2N57
2N57

JMnic Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION ·With TO-3 package ·Complement to type 2N5301/5302/5303 ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and sy

1.46. 2n5743 2n5744.pdf Size:125K _jmnic

2N57
2N57

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION ·With TO-66 package ·Low collector-emitter saturation voltage ·Fast switching speed APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbo l Absolute maxim

1.47. 2n5795-96.pdf Size:127K _microsemi

2N57
2N57

TECHNICAL DATA PNP DUAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/496 Devices Qualified Level JAN 2N5796 2N5795 JANTX 2N5796U JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 60 Vdc VCEO Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO TO-78* Collector Current 600 mAdc IC Both(2) One(1) Section Sections Tot

1.48. 2n5741 2n5742.pdf Size:117K _inchange_semiconductor

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2N57

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5741 2N5742 DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ Fast switching speed APPLICATIONS Ў¤ For general­purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum

1.49. 2n5758 2n5759 2n5760.pdf Size:118K _inchange_semiconductor

2N57
2N57

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5758 2N5759 2N5760 Fig.1 simplifi

1.50. 2n5738.pdf Size:36K _inchange_semiconductor

2N57
2N57

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5738 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATIN

1.51. 2n5734.pdf Size:129K _inchange_semiconductor

2N57
2N57

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5734 DESCRIPTION · ·With TO-3 package ·High current capability APPLICATIONS ·For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER C

1.52. 2n5737.pdf Size:36K _inchange_semiconductor

2N57
2N57

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5737 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATING

1.53. 2n5743 2n5744.pdf Size:125K _inchange_semiconductor

2N57
2N57

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5743 2N5744 DESCRIPTION Ў¤ With TO-66 package Ў¤ Low collector saturation voltage Ў¤ Fast switching speed APPLICATIONS Ў¤ For general­purpose switching and power amplifier applications. PINNING PIN 1 2 3 l Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maxi

1.54. 2n5740.pdf Size:51K _inchange_semiconductor

2N57
2N57

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5740 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATIN

1.55. 2n4398 2n4399 2n5745.pdf Size:121K _inchange_semiconductor

2N57
2N57

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N5301/5302/5303 Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N4398 2N4399 2N5745 Fig.1 simplified

1.56. 2n5732.pdf Size:129K _inchange_semiconductor

2N57
2N57

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5732 DESCRIPTION · ·With TO-3 package ·High current capability APPLICATIONS ·For linear amplifier and inductive switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER C

1.57. 2n5739.pdf Size:51K _inchange_semiconductor

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2N57

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5739 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATING

Datasheet: 2N5692 , 2N5693 , 2N5694 , 2N5695 , 2N5696 , 2N5697 , 2N5698 , 2N5699 , BC548 , 2N570 , 2N5700 , 2N5701 , 2N5702 , 2N5703 , 2N5704 , 2N5705 , 2N5706 .

 


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