All Transistors. RN1109FS Datasheet

 

RN1109FS Datasheet and Replacement


   Type Designator: RN1109FS
   SMD Transistor Code: L8
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: FSM
 

 RN1109FS Substitution

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RN1109FS Datasheet (PDF)

 ..1. Size:129K  toshiba
rn1107fs rn1108fs rn1109fs.pdf pdf_icon

RN1109FS

RN1107FS~RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment

 8.1. Size:164K  toshiba
rn1107act rn1109act.pdf pdf_icon

RN1109FS

RN1107ACT ~ RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications TOP View 0.60.05 Extra small package(CST3) is applicable for extra high density 0.50.03 fabrication. Incorporating a bias resis

 8.2. Size:339K  toshiba
rn1107 rn1109.pdf pdf_icon

RN1109FS

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2107 to 2109 Equivalent Circuit and Bias Resistor V

 8.3. Size:361K  toshiba
rn1107mfv rn1108mfv rn1109mfv.pdf pdf_icon

RN1109FS

RN1107MFV~RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV Unit: mm1.2 0.05Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 11 Incorporating a bias resistor into the transistor reduc

Datasheet: RN1107 , RN1108ACT , RN1108CT , RN1108FS , RN1108MFV , RN1108 , RN1109ACT , RN1109CT , MPSA42 , RN1109MFV , RN1109 , RN1110ACT , RN1110CT , RN1110FS , RN1110MFV , RN1110 , RN1111ACT .

History: ECG219 | MMPQ3467 | 2SB353A | BDB03 | 2SD5041Q | 2SB30 | DTA216

Keywords - RN1109FS transistor datasheet

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