2N5701 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N5701
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO129
Datasheet: 2N5695 , 2N5696 , 2N5697 , 2N5698 , 2N5699 , 2N57 , 2N570 , 2N5700 , 2N3055 , 2N5702 , 2N5703 , 2N5704 , 2N5705 , 2N5706 , 2N5707 , 2N5708 , 2N5709 .