RN1118 Datasheet and Replacement
Type Designator: RN1118
SMD Transistor Code: XW
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 4.7
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT416 SC75 SSM
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RN1118 Datasheet (PDF)
rn1114 rn1118.pdf

RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114, RN1115, RN1116, RN1117, RN1118 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2114 to 2118 Equivalent Circuit a
rn1114-rn1118.pdf

RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1117,RN1118 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114~2118 Equivalent Circuit and Bias Resistor
rn1114f rn1118f.pdf

RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114F to 2118F Equivalent Circuit and Bi
rn1114ft rn1118ft.pdf

RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN2114F
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: EMX1DXV6T1G | 3DA50B | UN611F | EMZ2 | MJ16010 | 2SC3717 | PN4258
Keywords - RN1118 transistor datasheet
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History: EMX1DXV6T1G | 3DA50B | UN611F | EMZ2 | MJ16010 | 2SC3717 | PN4258



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