RN1308 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN1308
SMD Transistor Code: XI
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT323
SC70
USM
RN1308 Transistor Equivalent Substitute - Cross-Reference Search
RN1308 Datasheet (PDF)
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RN1307~RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307,RN1308,RN1309 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2307~RN2309 Equivalent Circuit and Bias Resistor Values Typ
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