RN1311 Datasheet. Specs and Replacement

Type Designator: RN1311  📄📄 

SMD Transistor Code: XM

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT323 SC70 USM

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RN1311 datasheet

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RN1311

RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1310,RN1311 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2310 and RN2311 Equivalent Circui... See More ⇒

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RN1311

RN1314 RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314 RN2318 Equivalent Circuit and Bias Res... See More ⇒

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RN1311

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RN1311

RN1314 RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314 RN2318 Equivalent Circuit and Bias Res... See More ⇒

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Detailed specifications: RN1303, RN1304, RN1305, RN1306, RN1307, RN1308, RN1309, RN1310, 8050, RN1312, RN1313, RN1314, RN1315, RN1316, RN1317, RN1318, RN1321A

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