RN1313 Datasheet. Specs and Replacement
Type Designator: RN1313 📄📄
SMD Transistor Code: XP
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
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RN1313 Substitution
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RN1313 datasheet
RN1314 RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314 RN2318 Equivalent Circuit and Bias Res... See More ⇒
RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1310,RN1311 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2310 and RN2311 Equivalent Circui... See More ⇒
rn1314 rn1315 rn1316 rn1317 rn1318.pdf ![]()
RN1314 RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314 RN2318 Equivalent Circuit and Bias Res... See More ⇒
Detailed specifications: RN1305, RN1306, RN1307, RN1308, RN1309, RN1310, RN1311, RN1312, TIP31, RN1314, RN1315, RN1316, RN1317, RN1318, RN1321A, RN1322A, RN1323A
Keywords - RN1313 pdf specs
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