RN1322A Specs and Replacement
Type Designator: RN1322A
SMD Transistor Code: QB
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 65
RN1322A Substitution
- BJT ⓘ Cross-Reference Search
RN1322A datasheet
RN1321A RN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications High current driving is possible. Since bias resisters are built in the transistor,the miniaturization of the apparatus by curtailment of the number of p... See More ⇒
Detailed specifications: RN1312, RN1313, RN1314, RN1315, RN1316, RN1317, RN1318, RN1321A, 9014, RN1323A, RN1324A, RN1325A, RN1326A, RN1327A, RN1401, RN1402, RN1403
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