All Transistors. RN1322A Datasheet

 

RN1322A Datasheet and Replacement


   Type Designator: RN1322A
   SMD Transistor Code: QB
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: SOT323 SC70 USM
 

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RN1322A Datasheet (PDF)

 9.1. Size:191K  toshiba
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RN1322A

RN1321ARN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications High current driving is possible. Since bias resisters are built in the transistor,the miniaturization of the apparatus by curtailment of the number of p

Datasheet: RN1312 , RN1313 , RN1314 , RN1315 , RN1316 , RN1317 , RN1318 , RN1321A , C3198 , RN1323A , RN1324A , RN1325A , RN1326A , RN1327A , RN1401 , RN1402 , RN1403 .

History: MM1549 | UN2217Q | 2N2861 | 2SA360 | 2SC756-2 | BCY34AL | 2SC1008A

Keywords - RN1322A transistor datasheet

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