All Transistors. RN1324A Datasheet

 

RN1324A Datasheet and Replacement


   Type Designator: RN1324A
   SMD Transistor Code: QD
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SOT323 SC70 USM
 

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RN1324A Datasheet (PDF)

 9.1. Size:191K  toshiba
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RN1324A

RN1321ARN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications High current driving is possible. Since bias resisters are built in the transistor,the miniaturization of the apparatus by curtailment of the number of p

Datasheet: RN1314 , RN1315 , RN1316 , RN1317 , RN1318 , RN1321A , RN1322A , RN1323A , 13005 , RN1325A , RN1326A , RN1327A , RN1401 , RN1402 , RN1403 , RN1404 , RN1405 .

Keywords - RN1324A transistor datasheet

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