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RN1421 Specs and Replacement


   Type Designator: RN1421
   SMD Transistor Code: QA
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 1 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT346 SC59 SMINI

 RN1421 Transistor Equivalent Substitute - Cross-Reference Search

   

RN1421 detailed specifications

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RN1421

RN1421 RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications High current type (IC (max) = 800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and... See More ⇒

Detailed specifications: RN1411 , RN1412 , RN1413 , RN1414 , RN1415 , RN1416 , RN1417 , RN1418 , 2SC2383 , RN1422 , RN1423 , RN1424 , RN1425 , RN1426 , RN1427 , RN1441 , RN1442 .

Keywords - RN1421 transistor specs

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