RN1427 Specs and Replacement
Type Designator: RN1427
SMD Transistor Code: QG
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SOT346 SC59 SMINI
RN1427 Transistor Equivalent Substitute - Cross-Reference Search
RN1427 detailed specifications
rn1421 rn1427.pdf
RN1421 RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1421,RN1422,RN1423,RN1424 RN1425,RN1426,RN1427 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications High current type (IC (max) = 800mA) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and... See More ⇒
Detailed specifications: RN1417 , RN1418 , RN1421 , RN1422 , RN1423 , RN1424 , RN1425 , RN1426 , 431 , RN1441 , RN1442 , RN1443 , RN1444 , RN1501 , RN1502 , RN1503 , RN1504 .
History: CHUMB4GP
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