2N1171 Specs and Replacement
Type Designator: 2N1171
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.17 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
2N1171 Substitution
- BJT ⓘ Cross-Reference Search
2N1171 datasheet
Detailed specifications: 2N1166, 2N1166A, 2N1167, 2N1167A, 2N1168, 2N1169, 2N117, 2N1170, 2N5401, 2N1172, 2N1173, 2N1174, 2N1175, 2N1175A, 2N1175B, 2N1176, 2N1176A
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