RN1506 Datasheet and Replacement
Type Designator: RN1506
SMD Transistor Code: XF
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT25 SC74A SMV
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RN1506 Datasheet (PDF)
rn1501-1506.pdf

RN1501RN1506 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1501,RN1502,RN1503 RN1504,RN1505,RN1506 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
rn1507-1509.pdf

RN1507RN1509 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1507,RN1508,RN1509 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads)With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: S9012J | KTC2553 | KTC2202 | KT6115A | NA11F | 2SC3255R | BF212
Keywords - RN1506 transistor datasheet
RN1506 cross reference
RN1506 equivalent finder
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History: S9012J | KTC2553 | KTC2202 | KT6115A | NA11F | 2SC3255R | BF212



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