RN1601 Datasheet, Equivalent, Cross Reference Search
Type Designator: RN1601
SMD Transistor Code: XA
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 3
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT26
SC74
SM6
RN1601 Transistor Equivalent Substitute - Cross-Reference Search
RN1601 Datasheet (PDF)
rn1601-rn1606.pdf
RN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601,RN1602,RN1603 RN1604,RN1605,RN1606 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
rn1607-rn1609.pdf
RN1607~RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607,RN1608,RN1609 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to R
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
