All Transistors. RN1606 Datasheet

 

RN1606 Datasheet and Replacement


   Type Designator: RN1606
   SMD Transistor Code: XF
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT26 SC74 SM6
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RN1606 Datasheet (PDF)

 0.1. Size:142K  toshiba
 rn1601-rn1606.pdf pdf_icon

RN1606

RN1601~RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601,RN1602,RN1603 RN1604,RN1605,RN1606 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

 9.1. Size:135K  toshiba
 rn1607-rn1609.pdf pdf_icon

RN1606

RN1607~RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607,RN1608,RN1609 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to R

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA110 | AFT2222A | 2N1049A | 2SC3585D | 3DD5G | 2SB1184 | DTL1642

Keywords - RN1606 transistor datasheet

 RN1606 cross reference
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