RN1607 Datasheet. Specs and Replacement
Type Designator: RN1607 📄📄
SMD Transistor Code: XH
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 80
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RN1607 datasheet
RN1607 RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607,RN1608,RN1609 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to R... See More ⇒
RN1601 RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1601,RN1602,RN1603 RN1604,RN1605,RN1606 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process ... See More ⇒
Detailed specifications: RN1511, RN1544, RN1601, RN1602, RN1603, RN1604, RN1605, RN1606, 2N3055, RN1608, RN1609, RN1610, RN1611, RN1673, RN16J1, RN1701JE, RN1701
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