2N5729 Specs and Replacement
Type Designator: 2N5729
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
2N5729 Substitution
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2N5729 datasheet
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Detailed specifications: 2N571, 2N5710, 2N5711, 2N5712, 2N5713, 2N5714, 2N5715, 2N572, TIP42C, 2N573, 2N5730, 2N5731, 2N5732, 2N5733, 2N5734, 2N5735, 2N5736
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