All Transistors. RN1910AFS Datasheet

 

RN1910AFS Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN1910AFS
   SMD Transistor Code: C9
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT963 FS6

 RN1910AFS Transistor Equivalent Substitute - Cross-Reference Search

   

RN1910AFS Datasheet (PDF)

 ..1. Size:133K  toshiba
rn1910afs rn1911afs.pdf

RN1910AFS RN1910AFS

RN1910AFS, RN1911AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1910AFS, RN1911AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bia

 8.1. Size:145K  toshiba
rn1910fe-rn1911fe.pdf

RN1910AFS RN1910AFS

RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing

 8.2. Size:120K  toshiba
rn1910fs rn1911fs.pdf

RN1910AFS RN1910AFS

RN1910FS,RN1911FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1910FS,RN1911FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.80.05 0.10.050.10.05package. Incorporating a bias resistor into a

 8.3. Size:111K  toshiba
rn1910-rn1911.pdf

RN1910AFS RN1910AFS

RN1910,RN1911 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1910,RN1911 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2910,

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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