All Transistors. RN1910AFS Datasheet

 

RN1910AFS Datasheet and Replacement


   Type Designator: RN1910AFS
   SMD Transistor Code: C9
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT963 FS6
 

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RN1910AFS Datasheet (PDF)

 ..1. Size:133K  toshiba
rn1910afs rn1911afs.pdf pdf_icon

RN1910AFS

RN1910AFS, RN1911AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1910AFS, RN1911AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bia

 8.1. Size:145K  toshiba
rn1910fe-rn1911fe.pdf pdf_icon

RN1910AFS

RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing

 8.2. Size:120K  toshiba
rn1910fs rn1911fs.pdf pdf_icon

RN1910AFS

RN1910FS,RN1911FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1910FS,RN1911FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.80.05 0.10.050.10.05package. Incorporating a bias resistor into a

 8.3. Size:111K  toshiba
rn1910-rn1911.pdf pdf_icon

RN1910AFS

RN1910,RN1911 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1910,RN1911 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2910,

Datasheet: RN1908AFS , RN1908FE , RN1908FS , RN1908 , RN1909AFS , RN1909FE , RN1909FS , RN1909 , 2222A , RN1910FE , RN1910FS , RN1910 , RN1911AFS , RN1911FE , RN1911FS , RN1911 , RN1912AFS .

History: 2SB748A | BFV76 | 2SD1707 | BFV88 | RN1909AFS | RN1906FS | KSC1507R

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