RN1911AFS Datasheet. Specs and Replacement

Type Designator: RN1911AFS  📄📄 

SMD Transistor Code: CF

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.08 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT963 FS6

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RN1911AFS datasheet

 ..1. Size:133K  toshiba

 rn1910afs rn1911afs.pdf pdf_icon

RN1911AFS

RN1910AFS, RN1911AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1910AFS, RN1911AFS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bia... See More ⇒

 8.1. Size:145K  toshiba

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RN1911AFS

RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing ... See More ⇒

 8.2. Size:120K  toshiba

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RN1911AFS

RN1910FS,RN1911FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1910FS,RN1911FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.8 0.05 0.1 0.05 0.1 0.05 package. Incorporating a bias resistor into a... See More ⇒

 8.3. Size:111K  toshiba

 rn1910-rn1911.pdf pdf_icon

RN1911AFS

RN1910,RN1911 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1910,RN1911 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2910, ... See More ⇒

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Detailed specifications: RN1909AFS, RN1909FE, RN1909FS, RN1909, RN1910AFS, RN1910FE, RN1910FS, RN1910, BC639, RN1911FE, RN1911FS, RN1911, RN1912AFS, RN1912FS, RN1913AFS, RN1913FS, RN1961CT

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