All Transistors. RN1911 Datasheet

 

RN1911 Datasheet and Replacement


   Type Designator: RN1911
   SMD Transistor Code: XM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT363 SC88 US6
 

 RN1911 Substitution

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RN1911 Datasheet (PDF)

 0.1. Size:133K  toshiba
rn1910afs rn1911afs.pdf pdf_icon

RN1911

RN1910AFS, RN1911AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1910AFS, RN1911AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1 6 Incorporating a bia

 0.2. Size:145K  toshiba
rn1910fe-rn1911fe.pdf pdf_icon

RN1911

RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing

 0.3. Size:120K  toshiba
rn1910fs rn1911fs.pdf pdf_icon

RN1911

RN1910FS,RN1911FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1910FS,RN1911FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 Two devices are incorporated into a fine pitch small mold (6-pin) 0.80.05 0.10.050.10.05package. Incorporating a bias resistor into a

 0.4. Size:111K  toshiba
rn1910-rn1911.pdf pdf_icon

RN1911

RN1910,RN1911 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1910,RN1911 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2910,

Datasheet: RN1909 , RN1910AFS , RN1910FE , RN1910FS , RN1910 , RN1911AFS , RN1911FE , RN1911FS , D667 , RN1912AFS , RN1912FS , RN1913AFS , RN1913FS , RN1961CT , RN1961FE , RN1961FS , RN1961 .

History: 2SC2883-O | M28S | U2TB406 | DRC5A15E | PDTA123TM | PTB20216 | NSVBC848CLT1G

Keywords - RN1911 transistor datasheet

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