RN1962CT Datasheet and Replacement
Type Designator: RN1962CT
SMD Transistor Code: J1
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: CST6
RN1962CT Transistor Equivalent Substitute - Cross-Reference Search
RN1962CT Datasheet (PDF)
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Datasheet: RN1912AFS , RN1912FS , RN1913AFS , RN1913FS , RN1961CT , RN1961FE , RN1961FS , RN1961 , D882P , RN1962FE , RN1962FS , RN1962 , RN1963CT , RN1963FE , RN1963FS , RN1963 , RN1964CT .
History: H3203 | GT702A | HA7520 | 2SC3470
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History: H3203 | GT702A | HA7520 | 2SC3470
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