RN1962 Datasheet. Specs and Replacement

Type Designator: RN1962  📄📄 

SMD Transistor Code: XXB

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT363 SC88 US6

  📄📄 Copy 

 RN1962 Substitution

- BJT ⓘ Cross-Reference Search

 

RN1962 datasheet

 0.1. Size:130K  toshiba

rn1961fs rn1962fs rn1963fs rn1964fs rn1965fs rn1966fs.pdf pdf_icon

RN1962

RN1961FS RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1... See More ⇒

 9.1. Size:136K  toshiba

rn1967-rn1969.pdf pdf_icon

RN1962

RN1967 RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN... See More ⇒

 9.2. Size:191K  toshiba

rn1961ct rn1966ct.pdf pdf_icon

RN1962

RN1961CT RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit mm Inverter Circuit Applications 1.0 0.05 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Sma... See More ⇒

 9.3. Size:544K  toshiba

rn1961fe rn1966fe.pdf pdf_icon

RN1962

RN1961FE RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans... See More ⇒

Detailed specifications: RN1913FS, RN1961CT, RN1961FE, RN1961FS, RN1961, RN1962CT, RN1962FE, RN1962FS, B647, RN1963CT, RN1963FE, RN1963FS, RN1963, RN1964CT, RN1964FE, RN1964FS, RN1964

Keywords - RN1962 pdf specs

 RN1962 cross reference

 RN1962 equivalent finder

 RN1962 pdf lookup

 RN1962 substitution

 RN1962 replacement