RN1963CT Datasheet and Replacement
Type Designator: RN1963CT
SMD Transistor Code: J2
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: CST6
RN1963CT Transistor Equivalent Substitute - Cross-Reference Search
RN1963CT Datasheet (PDF)
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RN1961FE RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans... See More ⇒
Datasheet: RN1961CT , RN1961FE , RN1961FS , RN1961 , RN1962CT , RN1962FE , RN1962FS , RN1962 , A42 , RN1963FE , RN1963FS , RN1963 , RN1964CT , RN1964FE , RN1964FS , RN1964 , RN1965CT .
History: RN1907FS | RN1603 | 2SA776A | 2SA811AC15 | 2SC3468E | RN1710 | JC556B
Keywords - RN1963CT transistor datasheet
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History: RN1907FS | RN1603 | 2SA776A | 2SA811AC15 | 2SC3468E | RN1710 | JC556B
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