RN1963FE Datasheet. Specs and Replacement

Type Designator: RN1963FE  📄📄 

SMD Transistor Code: XXC

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT563 ES6

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RN1963FE datasheet

 7.1. Size:130K  toshiba

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RN1963FE

RN1961FS RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1... See More ⇒

 9.1. Size:136K  toshiba

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RN1963FE

RN1967 RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN... See More ⇒

 9.2. Size:191K  toshiba

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RN1963FE

RN1961CT RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit mm Inverter Circuit Applications 1.0 0.05 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Sma... See More ⇒

 9.3. Size:544K  toshiba

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RN1963FE

RN1961FE RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans... See More ⇒

Detailed specifications: RN1961FE, RN1961FS, RN1961, RN1962CT, RN1962FE, RN1962FS, RN1962, RN1963CT, D667, RN1963FS, RN1963, RN1964CT, RN1964FE, RN1964FS, RN1964, RN1965CT, RN1965FE

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