All Transistors. RN1963FS Datasheet

 

RN1963FS Datasheet and Replacement


   Type Designator: RN1963FS
   SMD Transistor Code: J2
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT963 FS6

 RN1963FS Transistor Equivalent Substitute - Cross-Reference Search

   

RN1963FS Datasheet (PDF)

 ..1. Size:130K  toshiba
rn1961fs rn1962fs rn1963fs rn1964fs rn1965fs rn1966fs.pdf pdf_icon

RN1963FS

RN1961FS RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1... See More ⇒

 9.1. Size:136K  toshiba
rn1967-rn1969.pdf pdf_icon

RN1963FS

RN1967 RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN... See More ⇒

 9.2. Size:191K  toshiba
rn1961ct rn1966ct.pdf pdf_icon

RN1963FS

RN1961CT RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit mm Inverter Circuit Applications 1.0 0.05 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Sma... See More ⇒

 9.3. Size:544K  toshiba
rn1961fe rn1966fe.pdf pdf_icon

RN1963FS

RN1961FE RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans... See More ⇒

Datasheet: RN1961FS , RN1961 , RN1962CT , RN1962FE , RN1962FS , RN1962 , RN1963CT , RN1963FE , BD333 , RN1963 , RN1964CT , RN1964FE , RN1964FS , RN1964 , RN1965CT , RN1965FE , RN1965FS .

History: 2SC3753 | 2SC3900 | 2SC3781E | 2SC381 | 2SC3841 | 2SC3822 | 2SC3802

Keywords - RN1963FS transistor datasheet

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