RN1963 Datasheet and Replacement
Type Designator: RN1963
SMD Transistor Code: XXC
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT363 SC88 US6
RN1963 Substitution
RN1963 Datasheet (PDF)
rn1961fs rn1962fs rn1963fs rn1964fs rn1965fs rn1966fs.pdf

RN1961FS~RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1
rn1967-rn1969.pdf

RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit:mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN
rn1961ct rn1966ct.pdf

RN1961CT~RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit: mmInverter Circuit Applications 1.00.050.150.03Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Sma
rn1961fe rn1966fe.pdf

RN1961FE~RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans
Datasheet: RN1961 , RN1962CT , RN1962FE , RN1962FS , RN1962 , RN1963CT , RN1963FE , RN1963FS , BC547 , RN1964CT , RN1964FE , RN1964FS , RN1964 , RN1965CT , RN1965FE , RN1965FS , RN1965 .
History: MJD210T4G | 2SD5032 | 2SD362 | 2SD1628G | BFU520Y | MJ3055 | STA473A
Keywords - RN1963 transistor datasheet
RN1963 cross reference
RN1963 equivalent finder
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History: MJD210T4G | 2SD5032 | 2SD362 | 2SD1628G | BFU520Y | MJ3055 | STA473A



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