RN1964CT Datasheet and Replacement
Type Designator: RN1964CT
SMD Transistor Code: J3
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: CST6
RN1964CT Transistor Equivalent Substitute - Cross-Reference Search
RN1964CT Datasheet (PDF)
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Datasheet: RN1962CT , RN1962FE , RN1962FS , RN1962 , RN1963CT , RN1963FE , RN1963FS , RN1963 , BD222 , RN1964FE , RN1964FS , RN1964 , RN1965CT , RN1965FE , RN1965FS , RN1965 , RN1966CT .
History: RN1901 | 2SA811AC15 | 2SD2652 | 2SC3468E | JC556B | RN1710 | 2SA776A
Keywords - RN1964CT transistor datasheet
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History: RN1901 | 2SA811AC15 | 2SD2652 | 2SC3468E | JC556B | RN1710 | 2SA776A
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