RN1965FS Datasheet and Replacement
Type Designator: RN1965FS
SMD Transistor Code: J4
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.05 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT963 FS6
RN1965FS Transistor Equivalent Substitute - Cross-Reference Search
RN1965FS Datasheet (PDF)
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Datasheet: RN1963FS , RN1963 , RN1964CT , RN1964FE , RN1964FS , RN1964 , RN1965CT , RN1965FE , 2N2222 , RN1965 , RN1966CT , RN1966FE , RN1966FS , RN1966 , RN1967CT , RN1967FE , RN1967FS .
History: RN2110CT | 2SD2651 | MJD200RLG | K2108B | K2122A | K2110B | BUS23C
Keywords - RN1965FS transistor datasheet
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History: RN2110CT | 2SD2651 | MJD200RLG | K2108B | K2122A | K2110B | BUS23C
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