RN1966FE Datasheet. Specs and Replacement

Type Designator: RN1966FE  📄📄 

SMD Transistor Code: XXF

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT563 ES6

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RN1966FE datasheet

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RN1966FE

RN1961FE RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans... See More ⇒

 0.1. Size:193K  toshiba

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RN1966FE

RN1961FE RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FE,RN1962FE,RN1963FE RN1964FE,RN1965FE,RN1966FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans... See More ⇒

 7.1. Size:130K  toshiba

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RN1966FE

RN1961FS RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications 1.0 0.05 0.8 0.05 0.1 0.05 0.1 0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1... See More ⇒

 8.1. Size:191K  toshiba

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RN1966FE

RN1961CT RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Unit mm Inverter Circuit Applications 1.0 0.05 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Sma... See More ⇒

Detailed specifications: RN1964FE, RN1964FS, RN1964, RN1965CT, RN1965FE, RN1965FS, RN1965, RN1966CT, C1815, RN1966FS, RN1966, RN1967CT, RN1967FE, RN1967FS, RN1967, RN1968CT, RN1968FE

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