RN1967FE Datasheet. Specs and Replacement

Type Designator: RN1967FE  📄📄 

SMD Transistor Code: XXH

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT563 ES6

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RN1967FE datasheet

 0.1. Size:147K  toshiba

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RN1967FE

RN1967FE RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. ... See More ⇒

 7.1. Size:107K  toshiba

 rn1967fs rn1968fs rn1969fs.pdf pdf_icon

RN1967FE

RN1967FS RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm 1.0 0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) 0.8 0.05 0.1 0.05 0.1 0.05 package. Incorporating a bias resis... See More ⇒

 8.1. Size:136K  toshiba

 rn1967-rn1969.pdf pdf_icon

RN1967FE

RN1967 RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1967,RN1968,RN1969 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN... See More ⇒

 8.2. Size:145K  toshiba

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RN1967FE

RN1967CT RN1969CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1967CT,RN1968CT,RN1969CT Switching Applications Unit mm 1.0 0.05 Inverter Circuit Applications 0.15 0.03 Interface Circuit Applications Driver Circuit Applications Two devices are incorporated into a fine pitch Small Mold (6 pin) ... See More ⇒

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Detailed specifications: RN1965FE, RN1965FS, RN1965, RN1966CT, RN1966FE, RN1966FS, RN1966, RN1967CT, TIP41, RN1967FS, RN1967, RN1968CT, RN1968FE, RN1968FS, RN1968, RN1969CT, RN1969FE

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